Introduction (in English)

Hideo Takeuchi (M 2016) was born in Shiga, Japan, in 1973. He received the B.S. degree in Engineering from Osaka City University, Osaka, Japan in 1995, and the M.S. degree in Physics from Graduate School of Science, Osaka University in 1997. In 2002, he received the Ph. D. degree in Engineering from Graduate School of Engineering, Osaka City University.
From 1997 to 1999, he was an engineer for Si-based LSI technology with ROHM CO., LTD., Kyoto, Japan. From 2002 to 2008, he was with Mitsubishi Electric Corporation, Hyogo, Japan, where he has been engaged in the research and development of high frequency electronic devices, and focused his attention on the characterization and design technology of epitaxial wafers for heterojunction bipolar transistors (HBTs) and AlxGa1-xN/GaN based high-electron-mobility transistors (HEMTs). From 2008 to 2013, he was an Associate Professor with Department of Electronic Systems Engineering, School of Engineering, The University of Shiga Prefecture, Shiga, Japan. Since 2013, he has been an Assistant Professor with Department of Applied Physics, Graduate School of Engineering, Osaka City University. In the academic position of the universities, he has been focusing his attention on optical functions of semiconductors. His research interests include terahertz radiation phenomena observed with the use of the time-domain techniques, ultrafast spectroscopy, photoreflectance spectroscopy, inspection technology for compound semiconductor wafers, and excitons in semiconductors.
Dr. Takeuchi is also a member of The Physical Society of Japan, a member of The Japan Society of Applied Physics, and a member of The American Physical Society.

His official WEB Site
URL:  http://www.ceres.dti.ne.jp/~hideo-t/profile.html